dsa 50 c 100 qb schottky diode gen 2 symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 230 i a v f 0.90 r 0.95 k/w v r = 1 2 3 min. 25 t = 10 ms applications: v rrm v 100 0.45 t vj vc = t vj c =ma 5 package: part number v r = t vj =c i f =a v t c = 155 c d = p tot 160 w t c c = t vj 175 c -55 v i rrm = = 100 25 25 t vj = 45c dsa 50 c 100 qb v a 100 v 100 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 1.07 t vj c =25 c j j unction capacitance v= v; 12 t 125 v f0 v 0.45 t vj = 175 c r f 7.3 f = 1 mhz = c 25 m v 0.72 t vj =c i f =a v 25 0.90 i f =a 50 i f =a 50 2x threshold voltage slope resistance for power loss calculation only backside: cathode (50 hz), sine v f = 0.72 v housing: high performance schottky diode low loss and soft recovery common cathode to-3p r compatible with to-247 thermal resistance junction to case thjc rectangular 0.5 very low vf extremely low switching losses low irm values improved thermal behaviour high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching rectifiers in switch mode power supplies (smps) free wheeling diode in low voltage converters fav average forward current fav 125 ixys reserves the right to change limits, conditions and dimensions. 20101129a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
dsa 50 c 100 qb i rms a per pin 50 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 5 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. in case of 1, a common cathod e/anode configuration and a non-isolated backside, the whole current capability can be used by con necting the backside. f c n 120 mounting force with clip 20 ordering delivering mode base qty code key standard part name dsa 50 c 100 qb 504033 tube 30 product mar k i n g date code part no. logo order code ixys abcd d s a 50 c 100 qb part number diode schottky diode low vf common cathode to-3p (3) = = = dsa50c100hb DSA60C100PB to-247ad (3) to-220ab (3) similar part package 1) 1 ) marking on product dsa50c100qb 100 100 voltage class current rating [a] reverse voltage [v] = = = = rms ixys reserves the right to change limits, conditions and dimensions. 20101129a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
dsa 50 c 100 qb outlines to-3p ixys reserves the right to change limits, conditions and dimensions. 20101129a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
dsa 50 c 100 qb 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50 60 70 020406080100 0.0001 0.001 0.01 0.1 1 10 10 30 50 70 0 204060 0 10 20 30 40 50 60 70 0.0001 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 0 10 20 30 40 50 60 70 80 0 20406080100 0 200 400 600 800 1000 dc 25c 50c 75c 100c 125c single pulse t vj =175c 150c i f [a] v f [v] i r [ma] v r [v] v r [v] c t [pf] t c [c] i f(av) [a] p (av) [w] t [s] note: all curves are per diode fig. 1 maximum forward voltage drop characteristics fig. 2 typ. reverse current i r vs. reverse voltage v r fig. 3 typ. junction capacitance c t vs. reverse voltage v r fig. 4 average forward current i f(av) vs. case temperature t c fig. 5 forward power loss characteristics fig. 6 transient thermal impedance junction to case i f(av) [a] t vj = 150c 125c 25c d= 0.5 d = dc 0.5 0.33 0.25 0.17 0.08 z thjc [k/w] t vj =25c r thi [k/w] 0.026 0.172 0.227 0.435 0.09 t i [s] 0.0005 0.011 0.072 0.34 1.5 ixys reserves the right to change limits, conditions and dimensions. 20101129a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
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